Field effect transistor

Details Field effect transistor Field effect transistor

2011-06-07

2011-06-07

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S103000, C257S189000, C257S194000, C257S330000, C257SE29127, C257SE29252

Reexamination Certificate

active

07956383

ABSTRACT:
A field effect transistor includes: a first nitride semiconductor layer having a plane perpendicular to a (0001) plane or a plane tilted with respect to the (0001) plane as a main surface; a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a wider bandgap than the first nitride semiconductor layer; a third nitride semiconductor layer formed on the second nitride semiconductor layer; and a source electrode and a drain electrode formed so as to contact at least a part of the second nitride semiconductor layer or the third nitride semiconductor layer. A recess that exposes a part of the second nitride semiconductor layer is formed between the source electrode and the drain electrode in the third nitride semiconductor layer. A gate electrode is formed in the recess and an insulating film is formed between the third nitride semiconductor layer and the gate electrode.

REFERENCES:
patent: 2006/0124962 (2006-06-01), Ueda et al.
patent: 2006/0157729 (2006-07-01), Ueno et al.
patent: 2006-173294 (2006-06-01), None
Higashiwaki, M. et al., “AlGaN/GaN Heterostructure Field-Effect Transistors with Current Gain Cut-off Frequency of 152 GHz on Sapphire Substrates,” J.J. Appl. Phys. vol. 44, pp. L475-L478, 2005.
Wang, R. et al., “Enhancement-Mode Si3N4/AlGaN/GaN MISHFETs,” IEEE Electron Device Lett., vol. 27, No. 10, pp. 793-795, Oct. 2006.

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