Field effect transistor

Details Field effect transistor Field effect transistor

2011-01-04

2011-01-04

Smith, Zandra V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S189000, C257S194000, C257SE29246, C257SE21403, C257SE21407

Reexamination Certificate

active

07863648

ABSTRACT:
A field effect transistor (100) exhibiting good performance at high voltage operation and high frequency includes a first field plate electrode (116) and a second field plate electrode (118). The second field plate electrode includes a shielding part (119) located in the region between the first field plate electrode and a drain electrode (114), and serves to shield the first field plate electrode from the drain electrode. When in the cross sectional view in the gate length direction, the length in the gate length direction of an overlap region where the second field plate electrode (118) overlap the upper part of a structure including the first field plate electrode and a gate electrode (113) is designated as Lol, and the gate length is Lg, the relation expressed as 0 ≦Lol/Lg≦1 holds.

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