Field-effect transistor

Details Field-effect transistor Field-effect transistor

2011-04-26

2011-04-26

Garber, Charles (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

Reexamination Certificate

active

07932177

ABSTRACT:
A field-effect transistor is provided, which includes an organic thin film and which can realize a low threshold voltage while a stable, high field-effect mobility is ensured at the same time. In a field-effect transistor provided with a gate electrode, a source electrode, a drain electrode, a semiconductor film, a gate insulating film, and a substrate, the gate insulating film is formed from a plurality of insulating layers. Here, a first insulating layer in contact with the semiconductor film is formed from poly-p-xylylene formed into a film by a CVD method. A second insulating layer is formed from, for example, cyanoethylpullulan, and the dielectric constant is specified to be higher than that of the first insulating layer.

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Parylene Coating Services, Inc.; “Properties of Parylene”http://www.paryleneinc.com/pdf/PDS—Dimer—International.pdf.
Knovel; 2004 MatWeb;Kipp, Dale O.; Diviision of Automation Creation ,Inc.; “Plastic Material Data Sheets”.
Yasuda et al., “Organic Field-Effect Transistors with Gate Dielectric Films of Poly-p-Xylylene Derivatives Prepared by Chemical Vapor Deposition,”Jpn. J. Appl. Phys.vol. 42, pp. 6614-6618 (2003).
Veres, et al., “Low-k Insulators as the Choice of Dielectrics in Organic Field-Effect Transistors,”Advanced Functional Materials, vol. 13, No. 3, pp. 199-204 (2003).
Onoue et al., “Low-Operating-Voltage Organic Field-Effect Transistors with Poly-p-Xylylene/High-k Polymer Bilayer Gate Dielectric”, Japanese Journal of Applied Physics, Japan Society of Applied Physics, Japan, vol. 45., No. 29., Jul. 21, 2006, pp. L770-L772.
Official Communication issued in corresponding European Patent Application No. 07713728.9, issued on Jan. 18, 2011.

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