Field effect transistor

Details Field effect transistor Field effect transistor

2011-05-10

2011-05-10

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S401000, C257SE29229, C257SE29230

Reexamination Certificate

active

07939866

ABSTRACT:
A transistor includes a first electrode on a substrate, wherein the first electrode comprises a bus bar and has first and second first electrode fingers extending therefrom, the fingers being spaced apart to define a channel therebetween. The transistor also includes a second electrode on the substrate having a second electrode finger spaced apart from the first electrode and extending along the channel to define a gate region between the fingers. The gate region comprises a “curved” portion beyond the end of the second electrode finger proximate to the bus bar of the first electrode and a gate electrode extends along the gate region, through the “curved” gate portion. The substrate further comprises an active layer beneath the gate region, characterized in that the active layer extends beyond the end of the second electrode finger beneath the “curved” portion of the gate region.

REFERENCES:
patent: 3449648 (1969-06-01), Beale et al.
patent: 3586930 (1971-06-01), Das et al.
patent: 4005467 (1977-01-01), Vergnolle
patent: 5313083 (1994-05-01), Schindler
patent: 6501136 (2002-12-01), Lin
patent: 2006/0022218 (2006-02-01), Masumoto et al.
patent: 0373803 (1990-06-01), None
patent: 0802571 (1997-10-01), None
Certified GB0709706.6 dated Mar. 25, 2008 and being sent via U.S. Postal Service.
Search Report dated Mar. 18, 2008; Application No. GB0709706.6.

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