Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1984-08-22
1988-07-05
Powell, William A.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156651, 156652, 156662, 357 41, 357 56, 437 41, 437126, 437228, H01L 2980, H01L 2702, H01L 21306, B44C 122
Patent
active
047558580
ABSTRACT:
The gate of a gallium indium arsenide FET grown on an indium phosphide substrate comprises a top layer of GaInAsP (band gap 1.2 eV) a middle layer of GaInAs and a bottom layer of InP. This can be etched to produce an overhanging top layer which allows self-aligned gate contact metallization avoiding the registration problems of a further masking stage.
REFERENCES:
patent: 4075652 (1978-02-01), Umebachi et al.
patent: 4354898 (1982-10-01), Coldren et al.
patent: 4468850 (1984-09-01), Liau et al.
patent: 4496403 (1985-01-01), Turley
patent: 4636829 (1987-01-01), Greenwood et al.
Dawe Piers J. G.
Thompson George H. B.
ITT Gallium Arsenide Technology Center
Powell William A.
Twomey Thomas N.
Walsh Robert A.
Werner Mary C.
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