Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-04-17
1996-08-20
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257340, 257339, 257342, 257343, 257386, 257397, 257520, 257901, 257 66, 257347, H01L 2701, H01L 2712
Patent
active
055481507
ABSTRACT:
A high-resistant p-silicon layer is formed on a silicon substrate through a silicon oxide film. N-source and n-drain layers are selectively formed in the surface of the high-resistant p-silicon layer. A gate electrode is formed through a gate insulating film on a channel region between the source and drain layers. To induce an n-inverted layer under the gate electrode, a p-base layer is formed in the high-resistant p-silicon layer. A depletion layer extending from a pn junction between the n-drain layer and the high-resistant p-silicon layer reaches the silicon oxide film in a thermal equilibrium state. Part of the high-resistant p-silicon layer extends into a channel region between the drain and base layers. The drain and base layers are connected to each other through part of the depletion layer in the thermal equilibrium state. A field effect transistor having a high-speed operation is provided.
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Funaki Hideyuki
Nakagawa Akio
Omura Ichiro
Sakai Tadashi
Sekimura Masayuki
Guay John
Jackson Jerome
Kabushiki Kaisha Toshiba
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