Field effect transistor

Details Field effect transistor Field effect transistor

1998-03-12

2000-09-05

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257369, 257401, 438199, H01L 2976, H01L 2994, H01L 31062, H01L 31113, H01L 31119

Patent

active

06114732&

ABSTRACT:
A transistor includes a source region; a drain region; a channel region interposed between the source region and the drain region; and at least a first gate electrode and a second gate electrode provided on the channel region. At least one of the first and second gate electrodes traverses substantially an entire width of the channel region. At least another one of the first and second gate electrodes traverses a part of the width of the channel region.

REFERENCES:
patent: 4219828 (1980-08-01), Lardy
patent: 5528065 (1996-06-01), Battersby et al.
patent: 5652452 (1997-07-01), Asano
patent: 5726458 (1998-03-01), Bui

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