Field effect transistor

Details Field effect transistor Field effect transistor

1998-07-31

2000-06-13

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257344, 257410, 257627, H01L 2978, H01L 2904

Patent

active

06075270&

ABSTRACT:
A field effect transistor and a method for forming the field effect transistor are made up of a source region which is formed on the substrate, a drain region which is formed on the substrate, a stepped portion which is formed in the substrate between the source region and the drain region, a gate insulating film which is formed on the stepped portion of the substrate, and a gate electrode which is formed on the gate insulating film, wherein, a thickness of the gate insulating film near the drain region, which is less than that of the gate insulating film on a channel region defined in the substrate between the source region and the drain region. Accordingly, the field effect transistor and a method for forming the field effect transistor can prevent degradation of transistor characteristics because of a hot carrier effect.

REFERENCES:
patent: 4455740 (1984-06-01), Iwai
patent: 5142640 (1992-08-01), Iwamatsu
patent: 5808340 (1998-09-01), Wollesen et al.
patent: 5886382 (1999-03-01), Witek

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