Field effect transistor

Details Field effect transistor Field effect transistor

1997-02-21

1998-06-16

Wallace, Valencia Martin

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257401, 257404, H01L 2976, H01L 2994

Patent

active

057675562

ABSTRACT:
The invention relates to a field effect transistor that ensures that a threshold voltage does not increase even if a breakdown voltage is increased. The field effect transistor (FET) includes: (a) a first conductivity type semiconductor substrate; (b) a second conductivity type well formed at a surface of the substrate; (c) a first conductivity type well formed at a surface of the second conductivity type well, the first conductivity type well having an impurity concentration profile that varies in a depthwise direction with a maximum impurity concentration located at the deepest vertical position of the first conductivity type well; (d) a second conductivity type source region, formed at a surface of the first conductivity type well; (e) a second conductivity type drain region formed at a surface of the second conductivity type well; (f) a gate insulating film, formed at a surface of the first conductivity type semiconductor substrate between the source and drain regions; (g) a gate electrode, formed on the gate insulating film; (h) a source electrode, formed on the source region; and, (i) a drain electrode, formed on the drain region.

REFERENCES:
patent: 5317180 (1994-05-01), Hutter et al.
patent: 5366916 (1994-11-01), Summe et al.

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