Field-effect transistor

Details Field-effect transistor Field-effect transistor

1992-02-07

1994-03-15

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 15, 257 16, 257 40, 257325, 257405, 257406, H01L 2978

Patent

active

052948200

ABSTRACT:
A field-effect transistor comprising a semiconductor substrate having source and drain regions and a gate electrode, wherein a thin organic film including donor and acceptor molecules is provided between the semiconductor substrate and the gate electrode. When a predetermined voltage is applied to the gate electrode, charge transfer occurs between the donor and acceptor molecules included in the thin organic film, thereby controlling the surface potential of the semiconductor substrate.

REFERENCES:
patent: 4688078 (1985-12-01), Hseih
Kuhn, M., "A Quasi-Static Technique For MOS C-V and Surface State Measurements," Solid-State Electronics, vol. 13, No. 6, 1970, pp. 873-885.
Thin Solid Films, vol. 132, No. 1/4, Oct. 1985, pp. 33-39, C. D. Fung et al., "Planar silicon field-effect transistors with Langmuir-Blodgett gate insulators".
Applied Physics Letters, vol. 49, No. 18, Nov. 3, 1986, pp. 1210-1212, A. Tsumura et al. "Macromolecular electronic device: Field-effect transistor with a polythiophene thin film".
Thin Solid Films vol. 134 pp. 195-199; A. Barraud et al; Dec. 1985.

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