Field effect transistor

Details Field effect transistor Field effect transistor

1992-11-25

1995-07-04

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

With lattice constant mismatch

257194, 257280, 257472, 257615, H01L 2978

Patent

active

054303109

ABSTRACT:
A field effect transistor including a first compound semiconductor layer (2) serving as a buffer layer, an InAs layer (3) serving as a channel layer, and a second compound semiconductor layer (4) serving as an electron donor layer or a barrier layer which are, in this order, deposited on a semiconductor substrate (1) having a lattice constant different from that of InAs. The first compound semiconductor layer (2) is formed from a material selected from AlGaAsSb, AlGaPSb, AlInAsSb and AlInPSb which are substantially in lattice matching with InAs and have a bandgap greater than that of InAs, and hence the first layer (2) has a simple structure. An FET having excellent high frequency characteristics can be obtained on the substrate (1) having a lattice constant different from that of the InAs layer (3).

REFERENCES:
patent: 4424525 (1984-01-01), Mimura
An InAs Channel Heterojunction Field-Effect Transistor With High Transconductance, Yoh et al, IEEE Electron Device Letters, 11(11):526-528 1990.
(InAs).sub.3 (GaAs).sub.1 Superlattice Channel Field-Effect Transistor Grown By Molecular Beam Epitaxy, Nishiyama et al., Appl. Phys. Lett., 55(9):894-895 1989.

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