Field-effect transistor

Details Field-effect transistor Field-effect transistor

1973-03-15

1976-04-13

James, Andrew J.

Metal treatment

Stock

Ferrous

357 15, 357 41, 357 90, 148187, H01L 2978

Patent

active

039507777

ABSTRACT:
Disclosed herein is an improved field-effect transistor, having its effective base width determined by the impurity diffusion length or by a difference between impurity diffusion lengths for providing a reduced parasitic capacitance between gate and drain, and/or between gate or drain and other electrode. Disclosed also is a construction for effectively leading out an electrode from the base region and or source region, and methods adapted to manufacture the above-mentioned field-effect transistor.

REFERENCES:
patent: 3271201 (1966-09-01), Pomerantz
patent: 3456168 (1969-07-01), Tatom
patent: 3461360 (1969-08-01), Barson et al.
patent: 3463974 (1969-08-01), Kelley et al.
patent: 3513366 (1970-05-01), Clark
patent: 3573490 (1971-04-01), Sevin et al.
patent: 3685140 (1972-08-01), Engeler
patent: 3711940 (1973-01-01), Allison et al.
patent: 3714525 (1973-01-01), Brown et al.
patent: 3767984 (1973-10-01), Shinoda et al.

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