Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-03-17
1995-07-25
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257284, 257344, 257346, 257402, H01L 2948, H01L 2956, H01L 2964
Patent
active
054364892
ABSTRACT:
A field effect transistor includes a source electrode and a drain electrode disposed on a compound semiconductor substrate, a gate electrode having a T-shaped cross-section, and a gate pad having a T-shaped cross-section disposed at one side of the gate electrode, the gate electrode and the gate pad having a reinforcing thin metal film reinforcing the gate electrode on the rear surface of an overhanging portion of the head of the gate electrode and gate pad. Therefore, the head of the gate electrode is hardly ever separated from the leg of the gate electrode and a highly reliable T-shaped gate electrode is obtained. The gate electrode leg is produced using a thin film to which a pattern of the gate electrode is transcribed as a mask, thereby reducing the length of the head of the gate electrode. Accordingly, a T-shaped gate electrode is located in a deeper gate recess than ever without causing deterioration in the repeatability of its production.
REFERENCES:
patent: 4979010 (1990-12-01), Brigayen
patent: 5220186 (1993-06-01), Kasai et al.
patent: 5288654 (1994-02-01), Kasai et al.
patent: 5358885 (1994-10-01), Oku et al.
Hosogi et al., "Photo/EB Hybrid Exposure Process For T-Shaped Gate Superlow-Noise HEMTs", Electronics Letters, vol. 27, No. 22, Oct. 1991, pp. 2011-2012.
Crane Sara W.
Meier Stephen D.
Mitsubishi Denki & Kabushiki Kaisha
LandOfFree
Field effect transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Field effect transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field effect transistor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-741511