Field-effect transistor

Details Field-effect transistor Field-effect transistor

1994-04-11

1998-02-03

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257336, 257344, H01L 2362, H01L 2976, H01L 2994

Patent

active

057147833

ABSTRACT:
A field-effect transistor possesses improved electrostatic discharge characteristics. The transistor (10), formed in a p-type semiconductor substrate, comprises a gate (16) that forms a channel between two adjacent n-regions (12 and 14). At least one of the n-regions (12) has an n-well (22) below and centered about a contact pad (18). The n-well (22) has a second lower concentration of n-type impurities than either of the n-regions.

REFERENCES:
patent: 4005450 (1977-01-01), Yoshida et al.
patent: 4052229 (1977-10-01), Pashley
patent: 4382826 (1983-05-01), Pfleiderer et al.
patent: 4808544 (1989-02-01), Matsui
patent: 4868138 (1989-09-01), Chan et al.
patent: 4878100 (1989-10-01), McDavid
patent: 4920445 (1990-04-01), Jun
patent: 4956311 (1990-09-01), Liou et al.
patent: 4968644 (1990-11-01), Gallagher et al.
patent: 4981810 (1991-01-01), Fazan et al.
patent: 5019888 (1991-05-01), Scott et al.
patent: 5162888 (1992-11-01), Co et al.
patent: 5281841 (1994-01-01), Van Roozendaal et al.
Electrical Overstress/Electrostatic Discharge Symposium Proceedings, EOS/ESD Assoc. and IIT IIT Research Institute, Lin et al., Oct. 1994, "A CMOS VLSI ESD Input Protection Device, DIFIDW", pp. 202-209.

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