Field effect transistor

Details Field effect transistor Field effect transistor

2005-06-10

2009-10-27

Gebremariam, Samuel A (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S329000, C257S330000

Reexamination Certificate

active

07608888

ABSTRACT:
A field effect transistor (FET), in accordance with one embodiment, includes a first semiconductor layer, a first dielectric layer, a second semiconductor layer, a second dielectric layer and a third semiconductor layer. The first dielectric layer may be disposed upon the first semiconductor layer, wherein the first semiconductor layer has a first conductivity type. The second semiconductor layer, having a second conductivity type, may be disposed upon the first dielectric layer. The second dielectric layer may be disposed upon the second semiconductor layer. The third semiconductor layer, having a first conductivity type, may be disposed upon the first semiconductor layer between a first and second portion of the first dielectric layer, a first and second portion of the second semiconductor layer and a first and second portion of the second dielectric layer. The FET may also include a third dielectric layer disposed between the third semiconductor layer and the first and second portions of the second semiconductor layer.

REFERENCES:
patent: 5581100 (1996-12-01), Ajit
patent: 6060746 (2000-05-01), Bertin et al.
patent: 6251751 (2001-06-01), Chu et al.
patent: 6916745 (2005-07-01), Herrick et al.
patent: 2005/0148128 (2005-07-01), Pattanayak et al.

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