Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-04-14
2008-12-09
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S310000, C257SE27095, C257SE27096, C438S242000, C438S240000
Reexamination Certificate
active
07462901
ABSTRACT:
A field effect transistor is provided. The field effect transistor includes a channel region, electrically conductive channel connection regions, and a control region. The electrically conductive channel connection regions adjoin the channel region along with a transistor dielectric. The control region is separated from the channel region by the transistor dielectric. In addition, the control region may comprise a monocrystalline material.
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Can Praseodymium Oxide be an Alternative High-κ Gate Dielectric Material for Silicon Integrated Circuit? H.J. Mussig, H.J. Osten, E. Bugiel, J. Dabrowski, A. Fissel, T. Guminskaya, K. Ignatovich, J.P. Liu, P. Zaumseil, V. Zavodinsky, 2001 IRW Final Report, pp. 1-10.
Brinks Hofer Gilson & Lione
Budd Paul A
Infineon - Technologies AG
Jackson Jerome
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