Field effect transistor

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S310000, C257SE27095, C257SE27096, C438S242000, C438S240000

Reexamination Certificate

active

07462901

ABSTRACT:
A field effect transistor is provided. The field effect transistor includes a channel region, electrically conductive channel connection regions, and a control region. The electrically conductive channel connection regions adjoin the channel region along with a transistor dielectric. The control region is separated from the channel region by the transistor dielectric. In addition, the control region may comprise a monocrystalline material.

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patent: 6391705 (2002-05-01), Hsiao et al.
patent: 7052942 (2006-05-01), Smart et al.
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patent: 2003/0057491 (2003-03-01), Mitani et al.
patent: 2004/0173839 (2004-09-01), Casarotto et al.
patent: 103 01 939 (2004-09-01), None
Can Praseodymium Oxide be an Alternative High-κ Gate Dielectric Material for Silicon Integrated Circuit? H.J. Mussig, H.J. Osten, E. Bugiel, J. Dabrowski, A. Fissel, T. Guminskaya, K. Ignatovich, J.P. Liu, P. Zaumseil, V. Zavodinsky, 2001 IRW Final Report, pp. 1-10.

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