Field effect transistor

Details Field effect transistor Field effect transistor

2007-12-04

2007-12-04

Lewis, Monica (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257SE29320, C257SE29148

Reexamination Certificate

active

10985057

ABSTRACT:
A field effect transistor includes a semiconductor substrate having an active region, a source region, and a drain region at an upper portion of the substrate. The active region is located between the source and drain regions. A gate electrode is located on the active region. A source electrode is located on the source region and forms an ohmic contact with the source region. A drain electrode has a base part on and in ohmic contact with the drain region and an extended part having edge close to the gate electrode and over a boundary between the active region and the drain region. An insulating film is located between the boundary and the extended part and has a thickness that increases along a direction from the drain electrode toward the gate electrode in a step-by-step or continuous manner.

REFERENCES:
patent: 4486766 (1984-12-01), Shannon
patent: 5023676 (1991-06-01), Tatsuta
patent: 2103013 (1982-07-01), None
patent: 6-338610 (2004-12-01), None

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