Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-04-10
2007-04-10
Pourson, George (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S335000, C257S336000, C257S337000, C257S339000, C257S342000, C257SE21413
Reexamination Certificate
active
10798720
ABSTRACT:
A field effect transistor includes a substrate having a doping of a first conductivity type, a drain area in the substrate having a doping of a second conductivity type oppposite the first conductivity type, a source area in the substrate being laterally spaced from the drain area and having a doping of the second conductivity type, and a channel area in the substrate that is arranged between the source area and the drain area. In a portion of the substrate bordering the drain area, an area having a doping of the second conductivity type, which is connected to the drain area, is arranged such that in the portion alternating regions having the first conductivity type and having the second conductivity type are arranged.
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Krumbein Ulrich
Taddiken Hans
Infineon - Technologies AG
Maginot Moore & Beck
Parker John M.
Pourson George
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