Field-effect semiconductor device and method for making the...

Details Field-effect semiconductor device and method for making the... Field-effect semiconductor device and method for making the...

2007-01-09

2007-01-09

Nguyen, Tuan H. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S182000

Reexamination Certificate

active

10772375

ABSTRACT:
A method for making a filed-effect semiconductor device includes the steps of forming a gate electrode on a semiconductor layer composed of a gallium nitride-based compound semiconductor represented by the formula AlxInyGa1−x−yN, wherein x+y=1, 0≦x≦1, and 0≦y≦1; and forming a source electrode and a drain electrode by self-alignment using the gate electrode as a mask. A field-effect semiconductor device fabricated by the method is also disclosed.

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patent: 5548129 (1996-08-01), Kubena
patent: 6159781 (2000-12-01), Pan et al.
patent: 6387783 (2002-05-01), Furukawa et al.
patent: 6730586 (2004-05-01), Endoh

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