Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-08-02
2005-08-02
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S355000, C257S360000, C257S363000, C257S401000
Reexamination Certificate
active
06924532
ABSTRACT:
The present invention provides a field-effect power transistor having a first semiconductor region (10) with first channels (20) having a large ratio of a channel width (w) to a channel length (l) for conducting through an electric current from a source terminal (17) to a drain terminal (11) in a manner dependent on a signal at a gate contact (10′) of the first semiconductor region (10); at least one second semiconductor region (12) with second channels (22) having a small ratio of the channel width (w) to the channel length (l) for conducting through an electric current from the source terminal (17) to the drain terminal (11) in a manner dependent on a signal at the gate contact (12′) of the second semiconductor region (12); and a drive terminal (16) for providing a drive signal at the gate contacts (10′; 12′), a first predetermined resistor (14) in each case being provided between the gate contact (12′) of the at least second semiconductor region (12) and the drive terminal (16); and an overvoltage protection device (13) being provided at least between the gate contact (12′) of the second semiconductor region (12) and the drain terminal (11), for the purpose of switching on the second semiconductor region (12) if the voltage between them exceeds a predetermined value.
REFERENCES:
patent: 2004/0113179 (2004-06-01), Pfirsch et al.
Pfirsch Frank
Zundel Markus
Jenkins & Wilson & Taylor, P.A.
Prenty Mark V.
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