Field-effect photo-transistor

Details Field-effect photo-transistor Field-effect photo-transistor

1997-02-10

1999-08-17

Ngo, Ngan Van

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257291, 257300, H01L 31062, H01L 31113, H01L 27108

Patent

active

059397420

ABSTRACT:
A field-effect photo-transistor, being a three-terminal photosensing electrical device, based on integrated metal oxide semiconductor (MOS) technology. The device features a high output impedance which makes it particularly suitable as a photosensor for active pixel imaging arrays. Unlike the bipolar photo-transistor, which is a device well known in the art, the field-effect phototransistor is more compatible with MOS VLSI (Very Large Scale Integration) technology by inherently being a unipolar type device. Active pixel imaging arrays based on the disclosed invention can be integrated on the same semiconductor substrate with conventional digital or mixed signal processing functions to produce single-chip image processors for video or still picture cameras.

REFERENCES:
patent: 4268845 (1981-05-01), Koike et al.
patent: 4473836 (1984-09-01), Chamberlain
patent: 5625210 (1997-04-01), Lee et al.
patent: 5631704 (1997-05-01), Dickinson et al.
patent: 5698874 (1997-12-01), Hayashi
patent: 5739562 (1998-04-01), Ackland et al.

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