Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1992-04-02
1994-08-09
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 24, 257 25, 257192, 257 51, H01L 2712
Patent
active
053369041
ABSTRACT:
A field effect transistor according to the present invention uses a silicon monocrystalline substrate. At least two independent thin amorphous silicon layers are formed in a position for preventing movement of majority carriers in a channel region in the surface of the silicon substrate. Each amorphous silicon layer is between monocrystalline silicon layers. A gate electrode is formed on the surface of the channel region through a gate insulating layer. Thin potential barriers and a potential well are formed in the channel region by at least two amorphous silicon layers. Sharp potential barriers are formed by forming thin amorphous silicon layers, and a field effect transistor utilizing the resonant-tunneling effect with high tunneling efficiency is implemented.
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Bowers Courtney A.
Crane Sara W.
Mitsubishi Denki & Kabushiki Kaisha
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