Field effect devices having a source controlled via a...

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Reexamination Certificate

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C365S129000, C365S177000

Reexamination Certificate

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06982903

ABSTRACT:
Field effect devices having a source controlled via a nanotube switching element. Under one embodiment, a field effect device includes a source region and a drain region of a first semiconductor type and a channel region disposed therebetween of a second semiconductor type. The drain region is connected to a corresponding terminal. A gate structure is disposed over the channel region and connected to a corresponding terminal. A nanotube switching element is responsive to a first control terminal and a second control terminal and is electrically positioned in series between the source region and a terminal corresponding to the source region. The nanotube switching element is electromechanically operable to one of an open and closed state to thereby open or close an electrical communication path between the source region and its corresponding terminal. When the nanotube switching element is in the closed state, the channel conductivity and operation of the device is responsive to electrical stimulus at the terminals corresponding to the source and drain regions and the gate structure.

REFERENCES:
patent: 3448302 (1969-06-01), Shanefield
patent: 4845533 (1989-07-01), Pryor et al.
patent: 4853893 (1989-08-01), Eaton, Jr. et al.
patent: 4876667 (1989-10-01), Ross et al.
patent: 4888630 (1989-12-01), Paterson
patent: 4979149 (1990-12-01), Popovic et al.
patent: 5198994 (1993-03-01), Natori
patent: 5834818 (1998-11-01), Beilstein, Jr. et al.
patent: 5920101 (1999-07-01), Beilstein, Jr. et al.
patent: 6044008 (2000-03-01), Choi
patent: 6048740 (2000-04-01), Hsu et al.
patent: 6128214 (2000-10-01), Kuekes et al.
patent: 6159620 (2000-12-01), Heath et al.
patent: 6198655 (2001-03-01), Heath et al.
patent: 6256767 (2001-07-01), Kuekes et al.
patent: 6314019 (2001-11-01), Kuekes et al.
patent: 6430511 (2002-08-01), Tour et al.
patent: 6459095 (2002-10-01), Heath et al.
patent: 6462977 (2002-10-01), Butz
patent: 6518156 (2003-02-01), Chen et al.
patent: 6559468 (2003-05-01), Kuekes et al.
patent: 6574130 (2003-06-01), Segal et al.
patent: 6587408 (2003-07-01), Jacobson et al.
patent: 6643165 (2003-11-01), Segal et al.
patent: 6706402 (2004-03-01), Rueckes et al.
patent: 6707098 (2004-03-01), Hofmann et al.
patent: 2003/0021141 (2003-01-01), Segal et al.
patent: 2003/0021966 (2003-01-01), Segal et al.
patent: 2003/0042834 (2003-03-01), Dean et al.
patent: 2003/0124325 (2003-07-01), Rueckes et al.
patent: 2003/0165074 (2003-09-01), Segal et al.
patent: 2003/0170930 (2003-09-01), Choi et al.
patent: 2003/0199172 (2003-10-01), Rueckes et al.
patent: 2004/0027889 (2004-02-01), Occhipinti et al.
patent: 2004/0043148 (2004-03-01), Wei et al.
patent: 2004/0085805 (2004-05-01), Segal et al.
patent: 2004/0095837 (2004-05-01), Choi et al.
patent: 2004/0238907 (2004-12-01), Pinkerton et al.
Choi, W.B. et al., “Carbon-Nanotube-Based Nonvolatile Memory with Oxide-Nitride-Oxide Film and Nanoscale Channel”,Applied Physics Letters, 2003. 82 (2) 275-277.
Cui, J.B. et al., “Carbon Nanotube Memory Devices of High Charge Storage Stability”,Applied Physics Letters, 2002. 81 (17) 3260-3262.
Yoneya N. et al., “Charge transfer control by gate voltage in crossed nanotube junction”,Applied Physics Letters, 2002. 81 (12) 2250-2252.
Kinaret, J.M. et al., “A carbon-nanotube-based nanorelay”,Applied Physics Letters, 2003. 82 (8) 1287-1289.
Javey, Ali et al., “Carbon Nanotube Transistor Arrays for Multistage Complementary Logic and Ring Oscillators”,Nano Letters, 2002. 2 (9) 929-932.
Fuhrer, M.S. et al., “High-Mobility Nanotube Transistor Memory”,Nano Letters, 2002. 2 (7) 755-759.
Radosavljevic, M. et al., “Nonvolatile Molecular Memory Elements Based on Ambipolar Nanotube Field Effect Transistors”,Nano Letters, 2002. 2 (7) 761-764.
Sapmaz, S. et al., “Carbon Nanotubes as Nanoelectromechanical Systems”,Physical Review B, 2003. 67 23514-1-23514-7.
Rueckes, T. et al., “Carbon Nanotube-Based Nonvolatile Random Access Memory for Molecular Computing”,Science, 2000. 289, 94-97.
Bachtold, A. et al., “Logic Circuits with Carbon Nanotube Transistors”,Science, 2001. 294, 1317-1320.
Brehob, M. et al., “The Potential of Carbon-based Memory Systems”, 1-5.
Luyken, R.J. et al., “Concepts for hybrid CMOS-molecular non-volatile memories”,Nanotechnology, 2003. 14, 273-276.
Collins, P.G., “Nanotubes for Electronics”,Scientific American, Dec. 2000. 62-69.
Appenzeller, J., et al., “Optimized contact configuration for the study of transport phenomena in ropes of single-wall carbon nanotubes”,Applied Physics Letters, 2001. 78 (21) 3313-3315.
Appenzeller, J., et al., “A 10 nm MOSFET Concept”,Microelectronic Engineering, 2001. 56, 213-219.
Appenzeller, J. et al., “Field-Modulated Carrier Transport in Carbon Nanotube Transistors”Physical Review Letters, 2002. 89 (2) 126801-1-126801-6.
Appenzeller J. et al., “Carbon Nanotube Electronics”,IEEE Transactions on Nanotechnology, 2002. 1 (4) 184-189.
Avouris Ph., “Carbon nanotube electronics”,Chemical Physics, 2002. 281, 429-445.
Collins, P.G., et al., “Engineering Carbon Nanotubes and Nanotube Circuits Using Electrical Breakdown”,Science, 2001. 292, 706-709.
Collins, P.G., “Current Saturation and Electrical Breakdown in Multiwalled Carbon Nanotubes”,Physical Review Letters, 2001. 86 (14) 3128-3131.
Derycke, V., et al., “Carbon Nanotube Inter- and Intramolecular Logic Gates”,Nano Letters, 2001. 1 (9) 453-456.
Derycke, V., “Controlling Doping and Carrier Injection in Carbon Nanotube Transistors”,Applied Physics Letters, 2002. 80 (15) 2773-2775.
Heinze, S., “Carbon Nanotubes as Schottky Barrier Transistors”Physical Review Letters, 2002. 89 (10) 106801-1-106801-4.
Heinze, S., et al., “Unexpected Scaling of the Performance of Carbon Nanotube Transistors”, published on the web Feb. 2003.
Heinze, S., et al., “Electrostatic engineering of nanotube transistors for improved performance”,Applied Physics Letters, 2003. 83 (24) 5038-5040.
Martel, R., et al., “Single- and Multi-Wall Carbon Nanotube Field-Effect Transistors”,Applied Physics Letters, 1998. 73 (17) 2447-2449.
Avouris, Ph., “Molecular Electronics with Carbon Nanotubes”, Accounts of Chemical Research, 35 (12) 1026-1034.
Martel, R. et al., “Ambipolar Electrical Transport in Semiconducting Single-Wall Carbon Nanotubes”,Physical Review Letters, 2001. 87 (25) 256805-1-256805-4.
Martel, R. et al., “Carbon Nanotube Field-Effect Transistors and Logic Circuits”,DAC, 2002. 7.4 94-98.
Radosavljevic et al., “Drain Voltage Scaling in Carbon Nanotube Transistors”,Applied Physics Letters, 2003. 83 (12) 2435-2437.
Radosavljevic et al., “High Performance of Potassiumn-Doped Carbon Nanotube Field Effect Transistors”,Applied Physics Letters, 2004. 84 (18) 3693-3695.
Rochefort, A. et al., “Switching Behavior of Semiconducting Carbon Nanotubes Under an External Electric Field”,Applied Physics Letters, 2001. 78 (17) 2521-2523.
Wind, S.J. et al., “Lateral Scaling in Carbon-Nanotube Field-Effect Transistors”,Physical Review Letters, 2003. 91 (5) 058301-1-058301-4.
Wind, S.J. et al., “Transistor Structures for the Study of Scaling in Carbon Nanotubes”,J. Vac. Sci. Technol. B, 2003. 21 (6) 2856-2859.

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