Field effect devices and capacitors with improved thin film diel

Details Field effect devices and capacitors with improved thin film diel Field effect devices and capacitors with improved thin film diel

1997-02-28

1999-01-19

Crane, Sara

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257310, 438216, H01L 2976

Patent

active

058616519

ABSTRACT:
In accordance with the invention an electronic device is provided with a thin film dielectric layer of enhanced reliability. The dielectric comprises a thin film of silicon oxide having maximum concentrations of nitrogen near its major interfaces. In a field effect device, the maximum adjacent the gate enhances resistance to penetration of dopants from the gate. The secondary maximum near the channel enhances resistance to current stress. The maximum near the channel is preferably displaced slightly inward from the channel to minimize effects on carrier mobility.

REFERENCES:
patent: 4980307 (1990-12-01), Ito et al.
patent: 5254506 (1993-10-01), Hori
patent: 5397720 (1995-03-01), Kwong et al.
patent: 5407870 (1995-04-01), Okada et al.
patent: 5629221 (1997-05-01), Chao et al.
Runyan et al., Semiconductor Integrated Circuit Processing Technology, pp. 22, 26, and 387, 1990.

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