Active solid-state devices (e.g. – transistors – solid-state diode – Fet configuration adapted for use as static memory cell
Patent
1995-06-02
1998-06-23
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Fet configuration adapted for use as static memory cell
257393, 257 67, H01L 2711
Patent
active
057708924
ABSTRACT:
A CMOS SRAM cell has a polycrystalline silicon signal line between a common node, which is the data storage node, and the power supply. A field effect device is fabricated within this polycrystalline silicon signal line. The channel of the field effect device is separated from an active region in the substrate by a thin gate dielectric, and the active region within the substrate functions as the control gate for the field effect device. Such a device can be used to provide polycrystalline silicon P-channel transistors for use in CMOS SRAM cells.
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Chan Tsiu C.
Guritz Elmer H.
Han Yu-Pin
Galanthay Theodore E.
Jorgenson Lisa K.
Prenty Mark V.
Regan Christopher F.
SGS-Thomson Microelectronics Inc.
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