Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2006-08-31
2008-12-16
Nguyen, Dang T (Department: 2824)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S185260, C365S185270
Reexamination Certificate
active
07466579
ABSTRACT:
A field effect device includes a source electrode, a drain electrode spaced laterally apart from the source electrode, a channel formed between the source electrode and the drain electrode, and a gate electrode separated from the channel by an insulating layer. The channel includes a switching material that is reversibly switchable between a lower conductivity state and a higher conductivity state by at least one of: (i) application of a predetermined voltage between the source electrode and the drain electrode or between the gate electrode and at least one of the source electrode and the drain electrode, (ii) application of a voltage or a current to the switching material in the channel, and (iii) application of at least one of heat and light. Each of the conductivity states is persistent without the need for a sustaining excitation signal including an electrical field, heat and/or light applied to the device.
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Bednorz Georg J.
Gundlach David J.
Karg Siegfried F.
Meijer Gerhard J.
Riel Heike E.
International Business Machines - Corporation
Nguyen Dang T
Ryan & Mason & Lewis, LLP
Verminski Brian P.
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