Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-10-03
2009-02-03
Quach, Tuan N. (Department: 2893)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S164000, C438S283000, C257SE21429
Reexamination Certificate
active
07485510
ABSTRACT:
A semiconductor structure includes a semiconductor layer that includes an inverted V shaped channel region that allows avoidance of a raised source/drain region within the semiconductor structure. In one embodiment, a generally conventional gate electrode is located over a planar surface of the semiconductor layer over the inverted V shaped channel region. In another embodiment, the foregoing generally conventional gate electrode is used in conjunction with an inverted V shaped gate electrode that is located within an inverted V shaped notch that comprises the inverted V shaped channel region.
REFERENCES:
patent: 5250454 (1993-10-01), Maszara
patent: 5736435 (1998-04-01), Venkatesan et al.
patent: 6117712 (2000-09-01), Wu
patent: 6380027 (2002-04-01), Furukawa et al.
patent: 6504173 (2003-01-01), Hsu et al.
patent: 6914303 (2005-07-01), Doris et al.
patent: 6924517 (2005-08-01), Chen et al.
patent: 6939751 (2005-09-01), Zhu et al.
patent: 7019342 (2006-03-01), Hackler et al.
patent: 7407844 (2008-08-01), Loo et al.
patent: 2005/0090066 (2005-04-01), Zhu et al.
patent: 2006/0001095 (2006-01-01), Doris et al.
patent: 2006/0027881 (2006-02-01), Ilicali et al.
Kumar Mahender
Leobandung Effendi
Norris Christine
Ramachandran Ravikumar
Zhu Huilong
International Business Machines - Corporation
Li, Esq. Todd M. C.
Quach Tuan N.
Scully , Scott, Murphy & Presser, P.C.
LandOfFree
Field effect device including inverted V shaped channel... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Field effect device including inverted V shaped channel..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field effect device including inverted V shaped channel... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4096337