Field effect controlled semiconductor component with integrated

Details Field effect controlled semiconductor component with integrated Field effect controlled semiconductor component with integrated

1996-03-19

1998-03-10

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257536, 257379, H01L 2941

Patent

active

057264740

ABSTRACT:
A semiconductor body is covered by a polysilicon layer having a gate electrode and a contact surface for fastening a gate lead. An integrated ohmic resistor connects the gate electrode to the contact surface.

REFERENCES:
patent: 5182225 (1993-01-01), Matthews
patent: 5436197 (1995-07-01), Hause
Muroga, "VLSI System Design", Wiley & Sons, New York 1982, p. 251.

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