Field effect controlled semiconductor component

Details Field effect controlled semiconductor component Field effect controlled semiconductor component

1997-04-15

1999-02-09

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257382, H01L 2976

Patent

active

058698647

ABSTRACT:
A semiconductor component having a body with an upper surface, a base zone having a portion adjoining the upper surface of the semiconductor body, at least one source zone embedded in the base zone, at least one gate electrode lying parallel to the upper surface that covers at least the portion of the base zone adjoining the upper surface, a contact region constructed and arranged as a buried layer in the base zone and projecting laterally beyond the source zone, the contact region having a higher conductivity than that of the base zone, and an electrode that contacts the source zone and the contact region. In order to improve the contact between base zone and source electrode, the contact region is fashioned as a layer buried in the base zone and projects laterally beyond the source zone. Also, a field effect controlled semiconductor component having at least one source zone, at least one vertical gate electrode arranged in a trench lying vertically relative to the surface, at least one base zone that laterally abuts the trench, a contact region having a depth greater than that of the source zone and a conductivity higher than that of the base zone and is electrically connected thereto, and an electrode that contacts the source zone and the contact region.

REFERENCES:
patent: 5341011 (1994-08-01), Hshieh et al.
patent: 5428234 (1995-06-01), Sumi
patent: 5463241 (1995-10-01), Kubo

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