Field-effect-controllable, vertical semiconductor component and

Details Field-effect-controllable, vertical semiconductor component and Field-effect-controllable, vertical semiconductor component and

1997-09-19

1999-08-31

Brown, Peter Toby

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257330, 257332, 257329, 257327, 257712, 257713, 257720, H01L 2976, H01L 2994

Patent

active

059457082

ABSTRACT:
A field-effect-controllable, vertical semiconductor component, and a method for producing the semiconductor component include a semiconductor body having at least one drain zone of a first conduction type, at least one source zone of the first conduction type, at least one gate electrode insulated from the entire semiconductor body by a gate oxide, and a bulk region of the first conduction type. A source terminal is located on the rear side of the wafer, and a drain terminal and a gate terminal are located on the front side of the wafer.

REFERENCES:
patent: 3646409 (1972-02-01), Van Der Water et al.
patent: 5021845 (1991-06-01), Hashimoto
patent: 5539238 (1996-07-01), Malhi
patent: 5623152 (1997-04-01), Majumdar et al.
Siemens-Datenbuch, 1993/94 SIPMOS-Halbleiter, Leistungstransistoren und Dioden, pp. 29-116.
"An intelligent power mosfet with reverse battery protection for automotive applications" (Sakamoto), dated May 20, 1996, pp. 57-60.

Affiliated with

Also associated with

Rating

Field-effect-controllable, vertical semiconductor component and does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Field-effect-controllable, vertical semiconductor component and , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field-effect-controllable, vertical semiconductor component and will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2427049