Field-effect-controllable semiconductor configuration with a...

Details Field-effect-controllable semiconductor configuration with a... Field-effect-controllable semiconductor configuration with a...

2006-05-23

2006-05-23

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S403000

Reexamination Certificate

active

07049656

ABSTRACT:
A semiconductor configuration includes a semiconductor body with a first connection zone of a first conductivity type, a second connection zone of the first conductivity type, a channel zone of the first conductivity type, and at least one control electrode surrounded by an insulation layer. The channel zone is formed between the first connection zone and the second connection zone. The at least one control electrode extends, adjacent to the channel zone, from the first connection zone to the second connection zone. The first connection zone, the second connection zone and the at least one control electrode extend in the vertical direction such that, when a voltage is applied between the first and second connection zones, a current path along the lateral direction is formed in the channel zone.

REFERENCES:
patent: 3296462 (1967-01-01), Reddi
patent: 4393391 (1983-07-01), Blanchard
patent: 5844273 (1998-12-01), Konishi
patent: 6097061 (2000-08-01), Liu et al.
patent: 6452231 (2002-09-01), Nakagawa et al.
patent: 6617640 (2003-09-01), Tihanyi
patent: 2001/0025983 (2001-10-01), Tihanyi
patent: 0 923 132 (1999-06-01), None
B. Jayant Baliga: “The Accumulation-Mode Field-Effect Transistor: A New Ultralow On-Resistance MOSFET”, IEEE Electron Device Letters, vol. 13, No. 8, Aug. 1992.

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