Field-effect-controllable semiconductor component and method...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S341000, C257S492000, C438S268000, C438S274000

Reexamination Certificate

active

06940126

ABSTRACT:
A semiconductor component has at least one first terminal zone of a first conductivity type in a semiconductor body. The first terminal zone is contact-connected by a first terminal electrode. A drift zone of the first conductivity type is adjoined by a second terminal zone of the second conductivity type. A channel zone of a second conductivity type is formed between the at least one first terminal zone and the drift zone. A control electrode is insulated from the semiconductor body and adjacent to the channel zone. A first channel is formed by the channel zone in a region adjacent to the control electrode, the first channel conducts only upon application of a control voltage that is not equal to zero between the control electrode and the first terminal zone. The first terminal electrode is connected to the drift zone via at least one second channel of the first conductivity type, which already conducts in the event of a control voltage equal to zero.

REFERENCES:
patent: 4754310 (1988-06-01), Coe
patent: 5021845 (1991-06-01), Hashimoto
patent: 5216275 (1993-06-01), Chen
patent: 5285369 (1994-02-01), Balakrishnan
patent: 5438215 (1995-08-01), Tihanyi
patent: 5930630 (1999-07-01), Hshieh et al.
patent: 6482681 (2002-11-01), Francis et al.
patent: 6664590 (2003-12-01), Deboy
patent: 6686625 (2004-02-01), Tihanyi
patent: 6803629 (2004-10-01), Tihanyi
patent: 6846706 (2005-01-01), Spring et al.
patent: 6861706 (2005-03-01), Tihanyi
patent: 2003/0001548 (2003-01-01), Feldtkeller
patent: 43 09 764 (1994-09-01), None
patent: 198 40 032 (1999-11-01), None
patent: 100 01 394 (2001-07-01), None
patent: 97/29518 (1997-08-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Field-effect-controllable semiconductor component and method... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Field-effect-controllable semiconductor component and method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field-effect-controllable semiconductor component and method... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3429440

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.