Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-11-06
2000-11-14
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257341, 257378, H01L 2972
Patent
active
061473812
ABSTRACT:
A field effect-controllable semiconductor component, such as a new IGBT using planar technology, includes a shielding zone disposed about a base zone, resulting in elevation of a minority charge carrier density at a cathode side of the IGBT, leading to a reduction of forward voltage. The effect of a drift field produced due to a concentration gradient between the shielding zone and the base zone is that the inner zone no longer acts as a sink for the minority charge carriers. In order to ensure that the breakdown voltage of the IGBT is not reduced by the incorporation of the shielding zone, a non-connected, floating region of high conductivity is disposed in the region of the inner zone. A lower edge of the non-connected, floating region is deeper in the inner zone than a lower edge of the shielding zone. The non-connected, floating region has a conduction type opposite that of the shielding zone and the inner zone.
REFERENCES:
patent: 4364073 (1982-12-01), Becke et al.
patent: 4821095 (1989-04-01), Temple
Hirler Franz
Pfirsch Frank
Werner Wolfgang
Greenberg Laurence A.
Infineon - Technologies AG
Lerner Herbert L.
Stemer Werner H.
Wojciechowicz Edward
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