Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-07-07
1997-10-07
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257409, H01L 2976, H01L 2994
Patent
active
056751664
ABSTRACT:
A low voltage field effect transistor structure (20) is provided with a threshold voltage that is tolerant of process variations that alter the location of a source implant region (41). A first halo region (33) and a second halo region (36) are formed adjacent to source region (41) such that after subsequent thermal processing, a constant doping profile of opposite conductivity as source region (41) is formed in the channel region (23) adjacent the source region (41). The embodiments can be formed either adjacent to only the source region (41) to create a unilateral device, or the doping profile can be formed adjacent to both source region (41) and a drain region (40) to produce a bilateral device. An additional embodiment forms a second implant region in source region (41) to reduce junction leakage and capacitance.
REFERENCES:
patent: 5171700 (1992-12-01), Zamanian
patent: 5371394 (1994-12-01), Ma et al.
C. Codella et al., "Submicron IGFET Device with Double Implanted Lightly Doped Drain/Source Structure," IBM Technical Disclosure Bulletin, vol. 26, No. 12, May 1984, pp. 6584-6586.
Dow Diann
Ilderem Vida
Kaneshiro Michael H.
Loke Steven H.
Motorola Inc.
Neel Bruce T.
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