FET with stable threshold voltage and method of manufacturing th

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257409, H01L 2976, H01L 2994

Patent

active

056751664

ABSTRACT:
A low voltage field effect transistor structure (20) is provided with a threshold voltage that is tolerant of process variations that alter the location of a source implant region (41). A first halo region (33) and a second halo region (36) are formed adjacent to source region (41) such that after subsequent thermal processing, a constant doping profile of opposite conductivity as source region (41) is formed in the channel region (23) adjacent the source region (41). The embodiments can be formed either adjacent to only the source region (41) to create a unilateral device, or the doping profile can be formed adjacent to both source region (41) and a drain region (40) to produce a bilateral device. An additional embodiment forms a second implant region in source region (41) to reduce junction leakage and capacitance.

REFERENCES:
patent: 5171700 (1992-12-01), Zamanian
patent: 5371394 (1994-12-01), Ma et al.
C. Codella et al., "Submicron IGFET Device with Double Implanted Lightly Doped Drain/Source Structure," IBM Technical Disclosure Bulletin, vol. 26, No. 12, May 1984, pp. 6584-6586.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

FET with stable threshold voltage and method of manufacturing th does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with FET with stable threshold voltage and method of manufacturing th, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and FET with stable threshold voltage and method of manufacturing th will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2359651

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.