FET with a T-shaped gate of a particular structure

Details FET with a T-shaped gate of a particular structure FET with a T-shaped gate of a particular structure

1993-10-27

1995-03-21

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257413, 257192, 257472, H01L 29812, H01L 27085, H01L 2920

Patent

active

053998960

ABSTRACT:
A method for producing a T-shaped gate electrode of a semiconductor device including forming an insulating film on a semiconductor substrate, etching away a prescribed portion of the insulating film, depositing a metal film having a prescribed thickness, forming a first photoresist film and removing the photoresist film except where the insulating film has been removed, forming a second photoresist film, patterning the second photoresist film to expose the metal film along a side wall of the insulating film, etching away a portion of the metal film using the first and second photoresist films as a mask, depositing a gate metal and removing the first and second photoresist films and overlying gate metal by lift-off, and etching away the metal films remaining on the semiconductor substrate and the insulating film. Thereby, a T-shaped gate electrode with shortened length is formed.

REFERENCES:
patent: 5138409 (1992-08-01), Kawai

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