FET type sensor, ion density detecting method comprising...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S291000

Reexamination Certificate

active

07049645

ABSTRACT:
The surface of a semiconductor substrate (1) comprises an input diode section (2) and a floating diffusion section (3) consisting of a diffusion region reverse to the substrate in conductivity type, an input gate (6) and an output gate (7) fixed on an insulation film (5) extending from an input diode section to a floating diffusion section, a sensing section (9) consisting of an ion sensitive film fixed on the insulation film extending from the input.

REFERENCES:
patent: 4156818 (1979-05-01), Collins et al.
patent: 4275315 (1981-06-01), Maeding et al.
patent: 4974240 (1990-11-01), Suzuki et al.
patent: 60-247151 (1985-12-01), None
patent: 6-249826 (1994-09-01), None
patent: 8-278281 (1996-10-01), None
patent: 10-332423 (1998-12-01), None
patent: 2001-33274 (2001-02-01), None
patent: 2001-511245 (2001-08-01), None
patent: 2002-9274 (2002-01-01), None
patent: 2002-98667 (2002-04-01), None

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