Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing
Patent
1982-09-27
1986-02-11
Wolff, John H.
Static information storage and retrieval
Read/write circuit
Flip-flop used for sensing
365149, G11C 1140, G11C 1124
Patent
active
045702411
ABSTRACT:
A circuit arrangement is described with a sense latch for increasing the number of dynamic FET storage cells on bit lines (BL) connected to this sense latch (SL). The storage cells proper are arranged in a semiconductor structure having a diffusion layer acting as a conductor and a multiple metal layer. The outputs of the sense latch (SL) are connected to two pairs of cross-coupled charge storge elements (BB) acting as bit line coupling transistors which are connected to extended partitioned bit line pairs (BL1, BL1', and BL2, BL2'). Each section has its own reference cells and is coupled to the sense latch (SL), the sections furthest from the sense latch are coupled through low-capacity metal lines, and charge coupling elements (BB). These metal sections of the bit lines meander over the surface of the semiconductor structure.
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Gossage Glenn A.
International Business Machines - Corporation
Thornton Francis J.
Wolff John H.
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