FET optical receiver using backside illumination, indium materia

Details FET optical receiver using backside illumination, indium materia FET optical receiver using backside illumination, indium materia

1995-05-17

1997-03-04

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257 84, 257 98, 257 99, 257187, 257192, 257446, 257447, 257448, 257459, 257460, 257508, 257774, H01L 2348, H01L 310224, H01L 2941

Patent

active

056082550

ABSTRACT:
A photo FET device having a large area backside optical energy reception surface is disclosed. The photo FET device is fabricated in the source gate and drain upward configuration using a lattice determining surrogate substrate and a mesa-forming deep etch processing sequence and then inverted onto a new permanent substrate member and the surrogate substrate member removed in order to expose the active area backside optical energy reception surface. Fabrication of the device from two possible indium-inclusive semiconductor materials and a particular gate metal alloy is also disclosed.

REFERENCES:
patent: 4131909 (1978-12-01), Matsuda et al.
patent: 5486708 (1996-01-01), Takahashi et al.

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