Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Responsive to non-optical – non-electrical signal
Reexamination Certificate
2007-01-09
2010-12-28
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Responsive to non-optical, non-electrical signal
C257SE29242, C257S414000, C204S416000, C072S021500
Reexamination Certificate
active
07859029
ABSTRACT:
Provided are a FET-based sensor for detecting an ionic material, an ionic material detecting device including the FET-based sensor, and a method of detecting an ionic material using the FET-based sensor. The FET-based sensor includes: a sensing chamber including a reference electrode and a plurality of sensing FETs; and a reference chamber including a reference electrode and a plurality of reference FETs. The method includes: flowing a first solution into and out of the sensing chamber and the reference chamber of the FET-based sensor; flowing a second solution expected to contain an ionic material into and out of the sensing chamber while continuously flowing the first solution into and out of the reference chamber; measuring a current in a channel region between the source and drain of each of the sensing and reference FETs; and correcting the current of the sensing FETs.
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European Search Report; Feb. 28, 2008; 06124405.9-2004.
All references cited in the Search Report and not previously submitted are listed above.
Cho Yeon-ja
Kim Jin-tae
Lee Kyu-sang
Shim Jeo-young
Yoo Kyu-tae
Cantor & Colburn LLP
Jackson, Jr. Jerome
Samsung Electronics Co,. Ltd.
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