Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-12-18
2007-12-18
Tran, Thien F (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S421000
Reexamination Certificate
active
11071535
ABSTRACT:
An efficient spin polarizer in nonmagnetic semiconductors is provided. Previous spin injection devices suffered from very low efficiency (less than 35%) into semiconductors. An efficient spin polarizer is provided which is based on ferromagnetic-semiconductor heterostructures and ensures spin polarization of electrons in nonmagnetic semiconductors close to 100% near the ferromagnetic-semiconductor junctions at wide temperature intervals ranging from very low temperatures to room temperatures even in the case when spin polarization of electrons in the ferromagnetic layer is relatively low.
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Osipov Viatcheslav V.
Stylianos Yorgos
Ash Tankha of Counsel, Lipton Weinberger & Husick
Tran Thien F
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