Ferromagnetic random access memory

Details Ferromagnetic random access memory Ferromagnetic random access memory

2006-08-29

2006-08-29

Zapabian, Amir (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S065000

Reexamination Certificate

active

07099178

ABSTRACT:
A ferromagnetic random access memory includes a first and second blocks. Each of the first and second blocks includes a switch transistor and memory cells connected in series between a first and second end. The memory cell includes a ferromagnetic capacitor and a cell transistor connected in parallel. A first plate line is connected to each of the first end of the first and second blocks. A first block selection transistor includes a current path one end of which is connected to the second end of the first block. A second block selection transistor includes a current path one end of which is connected to the second end of the second block. A first bit line is connected to each of another end of the current path in the first and second block selection transistors.

REFERENCES:
patent: 5418750 (1995-05-01), Shiratake et al.
patent: 6934177 (2005-08-01), Takashima
patent: 2002/0040988 (2002-04-01), Hidaka et al.
patent: 2003297078 (2003-10-01), None

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