Ferromagnetic memory cell and methods of making and using...

Details Ferromagnetic memory cell and methods of making and using... Ferromagnetic memory cell and methods of making and using...

2005-08-31

2009-02-17

Potter, Roy K (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S003000

Reexamination Certificate

active

07491994

ABSTRACT:
In a first aspect, a first apparatus is provided. The first apparatus is a memory cell that includes (1) a semiconductor fin enclosure formed on an insulating layer of a substrate; and (2) a ferromagnetic material within the semiconductor fin enclosure. A top surface of the ferromagnetic material is below a top surface of the semiconductor fin enclosure. Numerous other aspects are provided.

REFERENCES:
patent: 5068826 (1991-11-01), Matthews
patent: 5329480 (1994-07-01), Wu et al.
patent: 5389566 (1995-02-01), Lage
patent: 6064083 (2000-05-01), Johnson
patent: 6768150 (2004-07-01), Low et al.

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