Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2007-05-01
2007-05-01
Auduong, Gene N. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S170000, C257S295000
Reexamination Certificate
active
10962253
ABSTRACT:
Ferromagnetic materials for use with spin memory and logic devices include a geometry and composition adapted to increase spin injection efficiency and/or reduce fringe fields. The ferromagnetic materials can be oriented to implement a variable spin resistance. The ferromagnetic layers are fabricated to permit the device to have two stable magnetization states, parallel and antiparallel. In the “on” state the device has two settable, stable resistance states determined by the relative orientation of the magnetizations of the ferromagnetic layers. An external magnetic field can change the magnetization state of the device by orienting the magnetization of the ferromagnetic layers to be parallel or antiparallel, thus changing the resistance of the device to a current of spin polarized electrons.
REFERENCES:
patent: 3650581 (1972-03-01), Boden et al.
patent: 4314349 (1982-02-01), Batcher
patent: 4360899 (1982-11-01), Dimyan et al.
patent: 4607271 (1986-08-01), Popovic et al.
patent: 4663607 (1987-05-01), Kitada et al.
patent: 4700211 (1987-10-01), Popovic et al.
patent: 4780848 (1988-10-01), Daughton et al.
patent: 4896296 (1990-01-01), Turner et al.
patent: 4905178 (1990-02-01), Mor et al.
patent: 5089991 (1992-02-01), Matthews
patent: 5173873 (1992-12-01), Wu et al.
patent: 5206590 (1993-04-01), Dieny et al.
patent: 5237529 (1993-08-01), Spitzer
patent: 5239504 (1993-08-01), Brady et al.
patent: 5245226 (1993-09-01), Hood et al.
patent: 5245227 (1993-09-01), Furtek et al.
patent: 5251170 (1993-10-01), Daughton et al.
patent: 5289410 (1994-02-01), Katti et al.
patent: 5304975 (1994-04-01), Saito et al.
patent: 5329480 (1994-07-01), Wu et al.
patent: 5329846 (1994-07-01), Lage
patent: 5396455 (1995-03-01), Brady et al.
patent: 5408377 (1995-04-01), Gurney et al.
patent: 5416353 (1995-05-01), Kamiguchi et al.
patent: 5420819 (1995-05-01), Pohm
patent: 5424236 (1995-06-01), Daughton et al.
patent: 5432373 (1995-07-01), Johnson
patent: 5448515 (1995-09-01), Fukami et al.
patent: 5452163 (1995-09-01), Coffey et al.
patent: 5465185 (1995-11-01), Heim et al.
patent: 5475277 (1995-12-01), Johnson
patent: 5488250 (1996-01-01), Hennig
patent: 5491338 (1996-02-01), Spitzer
patent: 5493465 (1996-02-01), Kamiguchi et al.
patent: 5524092 (1996-06-01), Park
patent: 5565695 (1996-10-01), Johnson
patent: 5580814 (1996-12-01), Larson
patent: 5594366 (1997-01-01), Khong et al.
patent: 5608593 (1997-03-01), Kim et al.
patent: 5621338 (1997-04-01), Liu et al.
patent: 5629549 (1997-05-01), Johnson
patent: 5629922 (1997-05-01), Moodera et al.
patent: 5640343 (1997-06-01), Gallagher et al.
patent: 5652445 (1997-07-01), Johnson
patent: 5652875 (1997-07-01), Taylor
patent: 5654566 (1997-08-01), Johnson
patent: 5926414 (1999-07-01), McDowell et al.
patent: 5998040 (1999-12-01), Nakatani et al.
patent: 6037774 (2000-03-01), Felmlee et al.
patent: 6064083 (2000-05-01), Johnson
patent: 6205008 (2001-03-01), Gijs et al.
patent: 6342713 (2002-01-01), Johnson
patent: 6381170 (2002-04-01), Prinz
patent: 6381171 (2002-04-01), Inomata et al.
patent: 6388912 (2002-05-01), Hannah et al.
patent: 6388916 (2002-05-01), Johnson
patent: 6639832 (2003-10-01), Hannah et al.
patent: 6741494 (2004-05-01), Johnson
R. Meservey, P. M. Tedrow and P. Fulde, Phys. Rev. Lett. 25, 1270 (1970).
P.M. Tedrow and R. Meservey, Phys. Rev. Lett. 26, 192 (1971).
P.M. Tedrow and R. Meservey, Phys. Rev. B 7, 318 (1973), (9 pages).
Paul Horowitz and Winfield Hill,The Art of Electronics,Cambridge Univ. Press, Cambridge U.K. (1980); see p. 328.
Mark Johnson and R. H. Silsbee,Interfacial Charge-Spin Coupling; Injection and Detection of Spin Magnetization in Metals, Phys. Rev. Lett. 55, 1790 (1985). (4 pages).
Mark Johnson and R. H. Silsbee,A Thermodynamic Analysis of Interfacial Transport and of the Thermomagnetoelectric System, Phys. Rev. B 35, 4959 (1987). (14 pages).
P.C. van Son, H. van Kampen and P. Wyder, Phys. Rev. Lett. 58, 2271 (1987). (3 pages).
Mark Johnson, and R. H. Silsbee,Ferromagnet-Nonferromagnet Interface Resistance, Phys. Rev. Lett. 60, 377 (1988).
Mark Johnson, and R. H. Silsbee,Coupling of Electronic Charge and Spin at a Ferromagnetic-Paramagnetic Interface, Phys. Rev. B 37, 5312 (1988). (14 pages).
Mark Johnson, and R. H. Silsbee,The Spin Injection Experiment, Phys. Rev. B 37, 5326 (1988). (10 pages).
Mark Johnson, and H. Silsbee,Electron Spin Injection and Detection at a Ferromagnetic-Paramagnetic Interface, J. Appl. Phys. 63, 3934 (1988). (6 pages).
P.C. van Son, H. van Kampen and P. Wyder, Phys. Rev. Lett. 60, 378 (1988).
R.S. Popovic,Hall-effect Devices, Sens. Actuators 17, 39 (1989).
James Daughton,Magnetoresistive Memory Technology, Thin Solid Films 216, 162 (1992). (7 pages).
J. De Boeck, J. Harbison et al.,Non-volatile Memory Characteristics of Submicrometer Hall Structures Fabricated in Epitaxial Ferromagnetic MnA1 Films on GaAs, Electronics Letters 29, 421 (1993). (3 pages).
Mark Johnson,Spin Accumulation in Gold Films, Phys. Rev. Lett. 70, 2142 (1993). (4 pages).
Mark Johnson,Bipolar Spin Switch, Science 260, 320 (1993). (4 pages).
Mark Johnson,Bilayer Embodiment of the Bipolar Spin Switch, Appl. Phys. Lett. 63, 1435 (1993). (3 pages).
Mark Johnson,The All-Metal Spin Transistor, I.E.E.E. Spectrum Magazine 31 No. 5, 47 (1994). (5 pages).
Mark Johnson,Spin Polarization of Gold Films via Transport, J. Appl. Phys. 75, 6714 (1994). (6 pages).
Mark Johnson,Spin-Coupled Resistance Observed in Ferromagnet-Superconductor-Ferromagent Trilayers, Appl. Phys. Lett., Sep. 12, 1994.
Mark Johnson,The Bipolar Spin Transistor, I.E.E.E. Potentials 14, 26 (1995).
S. T. Chui and J. R. Cullen,Spin Transmission in Metallic Trilayers, Phys. Rev. Lett. 74, 2118 (1995). (4 pages).
Moodera, J.S. et al., “Large Magnetoresistance at Room Temperture in Ferromagnetic Thin Film Tunnel Junctions,” Physical Review Letters, vol. 74, No. 16, Apr. 17, 1995, pp. 3273-3276.
Nakatani, R. et al., “Changes in the Electrical Resistivity of Fe-C/Al2O3/Fe-Ru multilayered films due to a magnetic field,” Jour. of Materials Science Letters 10 (1991), pp. 827-828.
Auduong Gene N.
Gross J. Nicholes
Spinop Corporation
LandOfFree
Ferromagnetic layer compositions and structures for spin... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Ferromagnetic layer compositions and structures for spin..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ferromagnetic layer compositions and structures for spin... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3767733