Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-11-17
1998-04-14
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
3613215, 437 43, H01L 2994, H01L 27108
Patent
active
057395632
ABSTRACT:
A semiconductor memory device comprising a silicon substrate, a plurality of switching transistors formed on the silicon substrate, an insulating layer having an opening and formed on a surface portion of the silicon substrate where the plurality of switching transistors formed, and a plurality of capacitors for accumulating electric charge formed on the insulating layer and connected respectively to the switching transistors via a conductive film buried in the opening of insulating layer, wherein each of the capacitors for accumulating electric charge is provided with an underlying crystal layer formed on the insulating layer and with a dielectric film consisting essentially of a ferroelectric material and epitaxially or orientationaly grown on the underlying crystal layer, and the switching transistors and the capacitors for accumulating electric charge connected to each other constitute a plurality of memory cells arranged in a two-dimensional pattern.
REFERENCES:
patent: 5229309 (1993-07-01), Kato
patent: 5440173 (1995-08-01), Evans et al.
patent: 5578850 (1996-11-01), Fitch et al.
Iijima et al Appl Phys. Lett. 56 No. 6 5 Feb. 1990 "Preparation . . . BaTiO.sub.3 ., Evaporation" pp. 527-529.
Terauchi et al Journal of The Physical of Japan vol. 61 No. 7 Jul. 1992 pp. 2194-2197 "Structured . . . BaTiO.sub.3 Crystals".
Abe Kazuhide
Eguchi Kazuhiro
Fukushima Noburu
Kawakubo Takashi
Komatsu Shuichi
Jackson Jerome
Kabushiki Kaisha Toshiba
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