Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2005-04-19
2005-04-19
Tran, M. (Department: 2818)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S230010
Reexamination Certificate
active
06882558
ABSTRACT:
A method of operating a ferroelectric-type nonvolatile semiconductor memory comprising a memory unit having a bit line, a transistor for selection, a sub-memory unit composed of memory cells that are M in number, plate lines that are M in number, and a sense amplifier connected to the bit line; wherein each memory cell comprises a first electrode, a ferroelectric layer and a second electrode; the first electrodes of the memory cells constituting the sub-memory unit are in common with the sub-memory unit; said common first electrode is connected to the bit line through the transistor for selection; and each second electrode is connected to each plate line; said method comprising reading out data stored in the memory cell at a designated address externally designated, latching said data in the sense amplifier, and then outputting said data latched in the sense amplifier.
REFERENCES:
patent: 4873664 (1989-10-01), Eaton, Jr.
patent: 6091622 (2000-07-01), Kang
patent: 9-116107 (1997-05-01), None
patent: 09-121032 (1997-05-01), None
patent: 2000-349248 (2000-12-01), None
Kananen Ronald P.
Rader & Fishman & Grauer, PLLC
Sony Corporation
Tran M.
LandOfFree
Ferroelectric-type nonvolatile semiconductor memory and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Ferroelectric-type nonvolatile semiconductor memory and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ferroelectric-type nonvolatile semiconductor memory and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3369633