Ferroelectric-type nonvolatile semiconductor memory

Details Ferroelectric-type nonvolatile semiconductor memory Ferroelectric-type nonvolatile semiconductor memory

2006-01-31

2006-01-31

Nguyen, Viet Q. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S149000, C365S210130, C365S189090, C365S210130

Reexamination Certificate

active

06992914

ABSTRACT:
A ferroelectric-type nonvolatile semiconductor memory comprising a plurality of bit lines and a plurality of memory cells,each memory cell comprising a first electrode, a ferroelectric layer formed at least on said first electrode and a second electrode formed on said ferroelectric layer,a plurality of the memory cells belonging to one of two or more thermal history groups having different thermal histories with regard to their production processes,data of 1 bit being to be stored in one of memory cells forming a pair, another data of 1 bit being to be stored in the other of said memory cells, a pair of said memory cells being connected to a pair of the bit lines,a pair of the bit lines being connected to a differential sense amplifier,wherein, when data stored in one of said memory cells forming a pair is read out, a reference potential is provided to the bit line connected to the other of said memory cells,when another data stored in the other of said memory cells is read out, a reference potential is provided to the bit line connected to the one of said memory cells, anda reference potential of the same level is provided to the bit lines connected to the memory cells belonging to the same thermal history group, and reference potentials of different levels are provided to the bit lines connected to the memory cells belonging to the different thermal history groups.

REFERENCES:
patent: 5619066 (1997-04-01), Curry et al.
patent: 5973960 (1999-10-01), Shibata et al.
patent: 6081036 (2000-06-01), Hirano et al.
patent: 6185472 (2001-02-01), Onga et al.
patent: 6217213 (2001-04-01), Curry et al.
patent: 6303478 (2001-10-01), Nakamura et al.
patent: 6335876 (2002-01-01), Shuto
patent: 6754095 (2004-06-01), Tanaka et al.
patent: 6787825 (2004-09-01), Gudesen et al.
patent: 2001/0029070 (2001-10-01), Yamazaki et al.
patent: 2002/0022277 (2002-02-01), Park et al.
patent: 2003/0058683 (2003-03-01), Nishihara
patent: 2004/0170045 (2004-09-01), Nishihara
patent: 2007/0170045 (2004-09-01), Nishihara

Affiliated with

Also associated with

Rating

Ferroelectric-type nonvolatile semiconductor memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ferroelectric-type nonvolatile semiconductor memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ferroelectric-type nonvolatile semiconductor memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3542336