Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2005-05-03
2005-05-03
Nguyen, Viet Q. (Department: 2818)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S065000, C365S117000, C365S210130, C365S063000
Reexamination Certificate
active
06888735
ABSTRACT:
A ferroelectric-type nonvolatile semiconductor memory comprising a plurality of bit lines and a plurality of memory cells, a plurality of the memory cells belonging to one of two or more thermal history groups having different thermal histories with regard to their production processes, and a reference potential of the same level is provided to the bit lines connected to the memory cells belonging to the same thermal history group, and reference potentials of different levels are provided to the bit lines connected to the memory cells belonging to the different thermal history groups.
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Depke Robert J.
Holland & Knight LLP
Nguyen Viet Q.
Sony Corporation
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