Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-08-29
2006-08-29
Baumeister, B. William (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000, C257S310000, C257S410000, C257S411000, C257S412000, C257SE29272
Reexamination Certificate
active
07098496
ABSTRACT:
The present invention discloses a novel ferroelectric transistor design using a resistive oxide film in place of the gate dielectric. By replacing the gate dielectric with a resistive oxide film, and by optimizing the value of the film resistance, the bottom gate of the ferroelectric layer is electrically connected to the silicon substrate, eliminating the trapped charge effect and resulting in the improvement of the memory retention characteristics. The resistive oxide film is preferably a doped conductive oxide in which a conductive oxide is doped with an impurity species. The doped conductive oxide is most preferred to be In2O3with the dopant species being hafnium oxide, zirconium oxide, lanthanum oxide, or aluminum oxide.
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Hsu Sheng Teng
Li Tingkai
Anya Igwe U.
Baumeister B. William
Law Office of Gerald Maliszewski
Maliszewski Gerald
Sharp Laboratories of America Inc.
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