Ferroelectric transistor for storing two data bits

Details Ferroelectric transistor for storing two data bits Ferroelectric transistor for storing two data bits

2005-05-03

2005-05-03

Nguyen, Van Thu (Department: 2824)

Static information storage and retrieval

Systems using particular element

Ferroelectric

Reexamination Certificate

active

06888736

ABSTRACT:
A method of storing and accessing two data bits in a single ferroelectric FET includes selectively polarizing two distinct ferroelectric regions in the same gate dielectric layer separated by a non-ferroelectric dielectric region. A first ferroelectric region is sandwiched between the substrate and the gate terminal in the region of the source and is polarized in one of two states to form a first data bit within the FET. A second ferroelectric region is sandwiched between the substrate and the gate terminal in the region of the drain and is polarized in one of two states to form a second data bit within the FET. Detection of the first data bit is accomplished by selectively applying a read bias to the FET terminals, a first current resulting when a first state is stored and a second current resulting when a second state is stored. The polarization of the second data bit is accomplished by reversing the source and drain voltages.

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