Ferroelectric thin film, substrate provided with ferroelectric t

Stock material or miscellaneous articles – Composite – Of metal

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

428472, 428701, 428702, 427585, 4271263, 25251912, 25251913, B32B 1700

Patent

active

061656224

ABSTRACT:
A ferroelectric thin film includes a ferroelectric crystal containing Bi, Ti and O as constituent elements, wherein the composition ratio of Bi/Ti in the ferroelectric thin film is shifted from a stoichiometric composition. Also, a substrate provided with a ferroelectric thin film, a device having a capacitor structure used for a ferroelectric memory device, a pyroelectric sensor device, a piezoelectric device or the like, and a method for manufacturing a ferroelectric thin film are disclosed.

REFERENCES:
patent: 5423285 (1995-06-01), Paz de Araujo
patent: 5576564 (1996-11-01), Satoh
patent: 5811181 (1998-09-01), Kijima
Nakamura et al. (1993) Jpn.J. Appl. Phys., vol.32 (No. 9B)pp. 4086-4088.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Ferroelectric thin film, substrate provided with ferroelectric t does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ferroelectric thin film, substrate provided with ferroelectric t, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ferroelectric thin film, substrate provided with ferroelectric t will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-992475

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.