Ferroelectric thin film, substrate provided with ferroelectric t

Details Ferroelectric thin film, substrate provided with ferroelectric t Ferroelectric thin film, substrate provided with ferroelectric t

1996-12-27

2000-12-26

Speer, Timothy M.

Stock material or miscellaneous articles

Composite

Of metal

428472, 428701, 428702, 427585, 4271263, 25251912, 25251913, B32B 1700

Patent

active

061656224

ABSTRACT:
A ferroelectric thin film includes a ferroelectric crystal containing Bi, Ti and O as constituent elements, wherein the composition ratio of Bi/Ti in the ferroelectric thin film is shifted from a stoichiometric composition. Also, a substrate provided with a ferroelectric thin film, a device having a capacitor structure used for a ferroelectric memory device, a pyroelectric sensor device, a piezoelectric device or the like, and a method for manufacturing a ferroelectric thin film are disclosed.

REFERENCES:
patent: 5423285 (1995-06-01), Paz de Araujo
patent: 5576564 (1996-11-01), Satoh
patent: 5811181 (1998-09-01), Kijima
Nakamura et al. (1993) Jpn.J. Appl. Phys., vol.32 (No. 9B)pp. 4086-4088.

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